zxmp6a16dn8 document number: ds33586 rev. 4 - 2 1 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated dual p-channel 60v enhancement mode mosfet product summary v (br)dss r ds(on) max package i d t a = +25c (notes 4 & 6) -60v 85m @ v gs = -10v so-8 -3.9a 125m @ v gs = -4.5v -3.2a description this mosfet has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish; so lderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information part number marking reel size (inches) tape width (mm) quantity per reel zxmp6a16dn8ta zxmp6a16d 7 12 500 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information e3 equivalent circuit top view so-8 top view d1 s1 g1 s2 g2 d1 d2 d2 d 2 s2 g2 d 1 s1 g 1 zxmp6a16d = product type marking code yyww = date code marking yy = year (ex: 11 = 2011) ww = week (01 - 53)
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 2 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -60 v gate-source voltage (note 4) v gs 20 v continuous drain current v gs = 10v (notes 6 & 8) i d -3.9 a t a = +70c (notes 6 & 8) -3.1 (notes 5 & 8) -2.9 pulsed drain current (notes 7 & 8) i dm -18.3 a continuous source current (body diode) (notes 6 & 8) i s -3.2 a pulsed source current (body diode) (notes 7 & 8) i sm -18.3 a thermal characteristics characteristic symbol value unit power dissipation linear derating factor (notes 5 & 8) p d 1.25 10.0 w mw/c (notes 5 & 9) 1.81 14.5 (notes 6 & 8) 2.15 17 thermal resistance, junction to ambient (notes 5 & 8) r ja 100 c/w (notes 5 & 9) 70 (notes 6 & 8) 60 thermal resistance, junction to lead (notes 8 & 10) r jl 48.85 operating and storage temperature range t j , t stg -55 to 150 c notes: 4. aec-q101 v gs maximum is 16v. 5. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 6. same as note (5), except the device is measured at t 10 sec. 7. same as note (5), except the device is pulsed with d = 0.02 and pulse width 300s. 8. for a dual device with one active die. 9. for a device with two active die running at equal power. 10. thermal resistance from junction to solder-point.
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 3 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated thermal characteristics 100m 1 10 100 10m 100m 1 10 single pulse t amb =25c one active die r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 two active die one active die derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 t amb =25c one active die transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c one active die pulse power dissipation pulse width (s) maximum power (w)
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 4 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -60 ? ? v i d = -250a, v gs = 0v zero gate voltage drain current i dss ? ? -1.0 a v ds = -60v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) -1.0 ? ? v i d = -250a, v ds = v gs static drain-source on-resistance (note 11) r ds (on) ? ? 85 m ? v gs = -10v, i d = -2.9a ? 125 v gs = -4.5v, i d = -2.4a forward transconductance (notes 11 & 12) g fs ? 7.2 ? s v ds = -15v, i d = -2.9a diode forward voltage (note 11) v sd ? -0.85 -0.95 v i s = -3.4a, v gs = 0v, t j = +25c reverse recovery time (note 12) t rr ? 29.2 ? ns i s = -2a, di/dt = 100a/s, t j = +25c reverse recovery charge (note 12) q rr ? 39.6 ? nc dynamic characteristics (note 12) input capacitance c iss ? 1021 ? pf v ds = -30v, v gs = 0v, f = 1mhz output capacitance c oss ? 83.1 ? pf reverse transfer capacitance c rss ? 56.4 ? pf total gate charge (note 13) q g ? 12.1 ? nc v gs = -5v v ds = -30v, i d = -2.9a total gate charge (note 13) q g ? 24.2 ? nc v gs = -10v gate-source charge (note 13) q gs ? 2.5 ? nc gate-drain charge (note 13) q gd ? 3.7 ? nc turn-on delay time (note 13) t d(on) ? 3.5 ? ns v dd = -30v, v gs = -10v, i d = -1a, r g ? 6.0 turn-on rise time (note 13) t r ? 4.1 ? ns turn-off delay time (note 13) t d(off) ? 35 ? ns turn-off fall time (note 13) t f ? 10 ? ns notes: 11. measured under pulsed conditions. pulse width 300s; duty cycle 2% 12. for design aid only, not subject to production testing. 13. switching characterist ics are independent of operating junction temperatures.
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 5 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated typical characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 0.1 1 10 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 4v 10v 4v 3.5v -v gs 2.5v 4.5v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 2v 3.5v 3v 5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = - 2.9a v gs( th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 5v 4.5v 10v 3v 4v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance () -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 6 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated typical characteristics (cont.) 0.1 1 10 0 200 400 600 800 1000 1200 1400 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 5 10 15 20 0 2 4 6 8 10 i d = -2.9a v ds = -30v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 7 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated package outline dimensions suggested pad layout so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
zxmp6a16dn8 document number: ds33586 rev. 4 - 2 8 of 8 www.diodes.com july 2012 ? diodes incorporated zxmp6a16dn8 a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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